Kingston KVR16N11S 1600MHz DDR3 Non-ECC CL11 DIMM Desktop Value Ram – 8GB

Sold: 0

RM213.00

JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
VDDQ = 1.5V (1.425V ~ 1.575V)
800MHz fCK for 1600Mb/sec/pin
8 independent internal banks
Programmable CAS latency: 11, 10, 9, 8, 7, 6
Programmable Additive Latency: 0, CL – 2, or CL – 1 clock
8-bit pre-fetch
Burst Length: 8 (interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write (either on the fly using A12 or MRS)
Bi-directional Differential Data Strobe
Internal (self) calibration: Internal self calibration through ZQ
pin (RZQ: 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C,  3.9us at 85°C < TCASE < 95°Cº
Asynchronous Reset
PCB: Height 0.740” (18.75mm) or 1.180” (30.00mm)

Availability: 3 in stock

SKU: KVR16N11/8 Category:

Product Description

Model:
2GB – KVR16N11S6/2

FEATURES
• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL – 2, or CL – 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB : Height 1.180” (30.00mm), single sided component

Model:
4 GB – KVR16N11S8/4

FEATURES
• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL – 2, or CL – 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB : Height 0.740” (18.75mm) or 1.180” (30.00mm)

Model:
8GB – KVR16N11/8

FEATURES
• JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal banks
• Programmable CAS latency: 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL – 2, or CL – 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write (either on the fly using A12 or
MRS)
• Bi-directional Differential Data Strobe
• Internal (self) calibration: Internal self calibration through ZQ
pin (RZQ: 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°Cº
• Asynchronous Reset
• PCB: Height 0.740” (18.75mm) or 1.180” (30.00mm)

Product Dimensions (LxWxH) & Weight (KG)
33.02 x 0.254 x 14 cm & 0.1kg

What’s in the box
1x Kingston KVR16N11S 1600MH

Warranty
Lifetime warranty

Weight 0.1 kg
Dimensions 33.02 × 0.25 × 14.0 cm